The memory manufacturer Micron has the availability of LPDDR4X-4266 with 16 GBit capacity per chip announced. The RAM is intended for high-end smartphones, because with it packages from 3 GB to 16 GB are feasible – so far, there are only chip housing with six stacked dies for 12 GB of Samsung as in the Galaxy S10 + of the South Korean paver.
Micron uses a so-called for its 16-GBit Dies 1Z method, also called 10 nm class. Here sees the US manufacturer in front of Samsung, because they still use a 1Y node. The background to this is that the exact process is not mentioned – 1X could correspond to 18 nm, 1Y then 15 nm, and 1Z then 12 nm. Micron indicates that the 16Gbit die made in its own 1Z process compared to the 1Y node manufactured to have a reduction in power consumption of equal to 40 percent at the same speed. Elsewhere, however, the manufacturer speaks of only 10 percent, specifically in the context of LPDDR4X-4266.
With the 16-GBit this Micron builds different chip housing, of it eight uMCPs (UFS-based multi-chip packages): The offer ranges from 3 GB LPDDR4X with 64 GB Universal Flash Storage up to 8 GB plus 256 GB. The 16 GB version does not seem to be a combination with UFS, which should probably also apply to a possible 12 GB offshoot with six instead of eight chips in the package. The uMCPs have the advantage that DRAM and Flash are stacked and therefore take up less space on the smartphone board; This procedure has long been standard.
LPDDR4X is still the fastest memory in the mobile segment, with LPDDR5 there is a successor. The series production by Samsung is under way, the South Koreans produce according to their own information since the summer of 2019 already 12-GBit Dies with LPDDR5-5500. This corresponds at least to the purely theoretical data transfer rate ago an increase of almost 30 percent. The first system-on-a-chip with LPDDR5 support will appear this fall, such as Qualcomm's Snapdragon 865. Also, Apple's A13 and Huawei Kirin 985/990 could use the memory.